AOD2N60/aou2n60 600v, 2a n-channel mosfet general description product summary 700v@150 i d (atv gs =10v) 2a r ds(on) (atv gs =10v) <4.4 w 100%uistested!100%r g tested! symbol v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc maximumjunctiontoambient a,g t c =25c 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds 300 c junctionandstoragetemperaturerange 50to150 c powerdissipation b p d v 30 gatesourcevoltage t c =100c a i d t c =25c 2 1.4 theAOD2N60&aou2n60havebeenfabricatedusing anadvancedhighvoltagemosfetprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularacdcapplications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbeadoptedquicklyintonewandexistingofflinepowersupply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drainsourcevoltage 600 8 pulseddraincurrent c continuousdraincurrent b mj avalanchecurrent c 60 repetitiveavalancheenergy c derateabove25 o c 56.80.45 a 2 singleplusedavalancheenergy h 120 mj v/ns 5 maximumcasetosink a maximumjunctiontocase d,f c/w c/w 1.8 0.52.2 g ds g s d g s d top view to252dpak bottom view top view to251 bottom view g s d g s d rev5:nov2010 www.aosmd.com page1of6
AOD2N60/aou2n60 symbol min typ max units 600 700 bv dss /?tj 0.56 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3 4 4.5 v r ds(on) 3.6 4.4 w g fs 3.5 s v sd 0.79 1 v i s maximumbodydiodecontinuouscurrent 2 a i sm 8 a c iss 215 270 325 pf c oss 23 29 35 pf c rss 2.2 2.8 3.4 pf r g 3.5 4.4 6.6 w q g 9.5 11 nc q gs 1.9 2 nc q gd 4.7 6 nc t d(on) 17.2 21 ns t r 14.3 17 ns t d(off) 27 32 ns t f 17 20 ns t rr 154 185 ns q rr 0.8 0.96 m c thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c bodydiodereverserecoverycharge i f =2a,di/dt=100a/ m s,v ds =100v maximumbodydiodepulsedcurrentinputcapacitance outputcapacitance turnondelaytime turnonrisetime diodeforwardvoltageturnoffdelaytime v gs =10v,v ds =300v,i d =2a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =480v,i d =2a gatesourcechargegatedraincharge v ds =5v i d =250 m a v ds =480v,t j =125c i s =1a,v gs =0v v ds =40v,i d =1a forwardtransconductance dynamic parameters zerogatevoltagedraincurrent id=250a,vgs=0vv ds =0v,v gs =30v i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v bodydiodereverserecoverytime staticdrainsourceonresistance v gs =10v,i d =1a reversetransfercapacitance i f =2a,di/dt=100a/ m s,v ds =100v v gs =0v,v ds =25v,f=1mhz switching parameters a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironmentwitht a =25c. b.thepowerdissipationp d isbasedont j(max) =150cinato252package,usingjunctiontocasethermalresistance,andismoreusefulin settingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.c.repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =150c. d.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureoft j(max) =150c. g.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c. h.l=60mh,i as =2a,v dd =150v,r g =10 ? ,startingt j =25c rev5:nov2010 www.aosmd.com page2of6
AOD2N60/aou2n60 typical electrical and thermal characteristics 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) 55c v ds =40v 25c 125c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 1 2 3 4 5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 100 50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =1a 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev5:nov2010 www.aosmd.com page3of6
AOD2N60/aou2n60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =2a 1 10 100 1000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.2c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d rev5:nov2010 www.aosmd.com page4of6
AOD2N60/aou2n60 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d rev5:nov2010 www.aosmd.com page5of6
AOD2N60/aou2n60 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar dss 2 e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar rev5:nov2010 www.aosmd.com page6of6
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